Deposition of silicon nitride films using chemical vapor deposition for photovoltaic applications
نویسندگان
چکیده
منابع مشابه
Hot-Wire Chemical Vapor Deposition of Silicon and Silicon Nitride for Photovoltaics: Experiments, Simulations, and Applications
Hot-wire chemical vapor deposition is a promising technique for deposition of thin amorphous, polycrystalline, and epitaxial silicon films for photovoltaic applications. Fundamental questions remain, however, about the gas-phase and surface-kinetic processes involved. To this end, the nature of the wire decomposition process has been studied in detail by use of mass spectrometry. Atomic silicon...
متن کاملRemote plasma chemical vapour deposition of silicon nitride films
The relatively new technique of remote plasma enhanced
متن کاملPlasma-enhanced chemical vapor deposition of thick silicon nitride films with low stress on InP
• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version ...
متن کاملGrowth front roughening in silicon nitride films by plasma-enhanced chemical vapor deposition
The dynamic roughening of amorphous silicon nitride growth front prepared by a plasma-enhanced chemical vapor deposition is presented. Morphology of the films grown at different substrate temperatures ~from 50 to 350 °C! for various lengths of deposition time was measured ex situ using atomic force microscopy. The dynamic scaling exponents are measured as a;0.77, b;0.40, and 1/z;0.28, and do no...
متن کاملSimulations of Silicon Carbide Chemical Vapor Deposition
ii by using insulation material correctly, a more uniform temperature distribution can be obtained. A model for the growth of SiC is used to predict growth rates at various process parameters. A number of possible factors influencing the growth rate are investigated using this model. The importance of including thermal diffusion and the effect of etching by hydrogen is shown, and the effect of ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Results in Physics
سال: 2016
ISSN: 2211-3797
DOI: 10.1016/j.rinp.2016.11.029